Parametric results for: IRF1405 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 AVALANCHE RATED, HIGH RELIABILITY 2 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 12 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 21 AVALANCHE RATED, ULTRA-LOW RESISTANCE 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY 7 FAST SWITCHING 2

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250.0 mJ 2 270.0 mJ 8 420.0 mJ 14 560.0 mJ 6 590.0 mJ 13 810.0 mJ 7

Min (mJ) - Max (mJ)

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DRAIN 48

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Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 50

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DS Breakdown Voltage-Min (1)

55 V 51

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Drain Current-Max (ID) (5)

75 A 29 120 A 9 131 A 4 150 A 7 169 A 2

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

4.9 mΩ 31 5.3 mΩ 19

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 51

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TO-220AB 10 TO-262AA 6 TO-263AB 16 TO-263CA 1

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R-PSFM-T3 10 R-PSIP-T3 6 R-PSIP-T7 2 R-PSSO-G2 25 R-PSSO-G6 7

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e0 17 e3 27

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Manufacturer (3)

Infineon Technologies AG 25 International Rectifier 37 New Jersey Semiconductor Products Inc 1

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1 38

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Number of Elements (1)

1 51

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Number of Terminals (4)

2 25 3 16 6 7 7 2

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ENHANCEMENT MODE 51

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150.0 °C 3 175.0 °C 42

Min (°C) - Max (°C)

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-55.0 °C 1

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PLASTIC/EPOXY 50

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RECTANGULAR 50

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FLANGE MOUNT 10 IN-LINE 8 SMALL OUTLINE 32

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Active 8 Contact Manufacturer 1 Not Recommended 2 Obsolete 30 Transferred 22

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No 3 Yes 18

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225 7 250 1 260 14 NOT SPECIFIED 16

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Polarity/Channel Type (1)

N-CHANNEL 51

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200 W 11 230 W 25 330 W 5

Min (W) - Max (W)

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Surface Mount (2)

NO 18 YES 32

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