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IRF1010EZPBF
International Rectifier
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$0.4849 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 75 A | 8.5 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 99 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 340 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | 250 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB | LEAD FREE, PLASTIC PACKAGE-3 | 3 | unknown | EAR99 | |||||||
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IRF1010EZSPBF
International Rectifier
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$0.4999 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 75 A | 8.5 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 99 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 340 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | D2PAK | LEAD FREE, PLASTIC, D2PAK-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||
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IRF1010EZPBF
Infineon Technologies AG
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$0.8302 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 75 A | 8.5 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 99 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 340 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | FLANGE MOUNT, R-PSFM-T3 | compliant | EAR99 | Infineon | |||||||||||
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IRF1010EPBF
International Rectifier
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$0.8600 | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 75 A | 12 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 170 W | 200 W | 330 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | 250 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | MATTE TIN OVER NICKEL | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-220AB | LEAD FREE, PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | 8541.29.00.95 | |||||
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IRF1010ESTRLPBF
International Rectifier
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$0.9575 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 75 A | 12 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 330 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INTERNATIONAL RECTIFIER CORP | LEAD FREE, PLASTIC, D2PAK-3 | 3 | not_compliant | EAR99 | 8541.29.00.95 | |||||||
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IRF1010EPBF
Infineon Technologies AG
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$0.9648 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 75 A | 12 mΩ | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 330 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||
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IRF1010EZLPBF
International Rectifier
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$0.9979 | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 75 A | 8.5 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 99 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 340 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) - with Nickel (Ni) barrier | THROUGH-HOLE | SINGLE | INTERNATIONAL RECTIFIER CORP | TO-262AA | LEAD FREE, PLASTIC, TO-262, 3 PIN | 3 | not_compliant | EAR99 | ||||||
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IRF1010ESTRLPBF
Infineon Technologies AG
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$1.1031 | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 75 A | 12 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 320 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 330 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | ||||||||||
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IRF1010EZSTRLP
Infineon Technologies AG
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$1.1761 | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 75 A | 8.5 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 99 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 340 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | Infineon | |||||||||
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IRF1010EZSPBF
Infineon Technologies AG
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$1.3618 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 75 A | 8.5 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 99 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 140 W | 340 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN OVER NICKEL | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon |