Parametric results for: IRC640 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

430.0 mJ 2

43 hits Apply

DRAIN 42

43 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR 40

43 hits Apply

DS Breakdown Voltage-Min (1)

200 V 42

43 hits Apply

Drain Current-Max (ID) (1)

18 A 43

43 hits Apply

Drain-source On Resistance-Max (1)

180 mΩ 42

43 hits Apply

METAL-OXIDE SEMICONDUCTOR 43

43 hits Apply

R-PSFM-T5 42

43 hits Apply

e0 23 e2 1

43 hits Apply

Manufacturer (3)

International Rectifier 40 Thomson Consumer Electronics 1 Vishay Intertechnologies 2

43 hits Apply

Number of Elements (1)

1 43

43 hits Apply

Number of Terminals (1)

5 42

43 hits Apply

ENHANCEMENT MODE 43

43 hits Apply

150.0 °C 3

43 hits Apply

PLASTIC/EPOXY 42

43 hits Apply

RECTANGULAR 42

43 hits Apply

FLANGE MOUNT 42

43 hits Apply

Active 2 Obsolete 1 Transferred 40

43 hits Apply

No 22 Yes 20

43 hits Apply

225 1 250 19

43 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 43

43 hits Apply

125 W 38

43 hits Apply

125 W 2

43 hits Apply

Surface Mount (1)

NO 43

43 hits Apply