Parametric results for: IRC530 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

69.0 mJ 2

41 hits Apply

DRAIN 40

41 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR 38

41 hits Apply

DS Breakdown Voltage-Min (1)

100 V 40

41 hits Apply

Drain Current-Max (ID) (1)

14 A 41

41 hits Apply

Drain-source On Resistance-Max (1)

160 mΩ 40

41 hits Apply

METAL-OXIDE SEMICONDUCTOR 41

41 hits Apply

R-PSFM-T5 40

41 hits Apply

e0 22 e3 18

41 hits Apply

Manufacturer (2)

International Rectifier 40 Thomson Consumer Electronics 1

41 hits Apply

Number of Elements (1)

1 41

41 hits Apply

Number of Terminals (1)

5 40

41 hits Apply

ENHANCEMENT MODE 41

41 hits Apply

150.0 °C 2 175.0 °C 3

Min (°C) - Max (°C)

41 hits Apply

PLASTIC/EPOXY 40

41 hits Apply

RECTANGULAR 40

41 hits Apply

FLANGE MOUNT 40

41 hits Apply

Obsolete 37 Transferred 4

41 hits Apply

250 1

41 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 41

41 hits Apply

88 W 38

41 hits Apply

79 W 2 88 W 2

Min (W) - Max (W)

41 hits Apply

Surface Mount (1)

NO 41

41 hits Apply