Parametric results for: IPL60R1K5C6SATMA1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

26.0 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

600 V 1

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Drain-source On Resistance-Max (1)

1.5 Ω 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-N5 1

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e3 1

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Manufacturer (1)

Infineon Technologies AG 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

5 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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End Of Life 1

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Yes 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

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