Parametric results for: IPG20N10S4L35AATMA1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

60.0 mJ 1

1 hit Apply

DRAIN 1

1 hit Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

100 V 1

1 hit Apply

Drain Current-Max (ID) (1)

20 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

35 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PDSO-F8 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

1 hit Apply

1 1

1 hit Apply

Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

8 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

Yes 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply