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1 - 5 of 5 results
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IPG20N06S2L65AATMA1
Infineon Technologies AG
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IPG20N06S2L65ATMA1
Infineon Technologies AG
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IPG20N06S2L-65A
Infineon Technologies AG
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IPG20N06S2L-65
Infineon Technologies AG
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IPG20N06S2L65AUMA1
Infineon Technologies AG
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| Most Relevant | Technical | Compliance | Operating Conditions | Physical | Other | |||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Polarity/Channel Type |
Surface Mount
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Configuration |
Number of Terminals
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DS Breakdown Voltage-Min
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Number of Elements |
Drain Current-Max (ID)
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Drain-source On Resistance-Max
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Avalanche Energy Rating (Eas)
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Feedback Cap-Max (Crss)
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FET Technology |
Operating Mode
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Transistor Element Material
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JESD-30 Code
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JESD-609 Code
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Qualification Status
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Reference Standard
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Package Description
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Reach Compliance Code
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ECCN Code
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Samacsys Manufacturer
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Pin Count
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| Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | TDSON-8 | not_compliant | EAR99 | Infineon | ||||||
| Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TDSON-8 | not_compliant | EAR99 | Infineon | ||||||||||
| Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | ||||||
| No | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 80 A | SILICON | R-PDSO-F8 | e3 | Not Qualified | AEC-Q101 | 1 | 175 °C | 260 | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | 8 | ||||
| Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SILICON | R-PDSO-F8 | AEC-Q101 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TDSON-8 | unknown | EAR99 |
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IPG20N06S2L65AATMA1
Infineon Technologies AG
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$0.6110 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | TDSON-8 | not_compliant | EAR99 | Infineon | |||||||
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IPG20N06S2L65ATMA1
Infineon Technologies AG
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$0.7113 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TDSON-8 | not_compliant | EAR99 | Infineon | |||||||||||
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IPG20N06S2L-65A
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | 50 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | |||||||
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IPG20N06S2L-65
Infineon Technologies AG
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Check for Price | No | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 43 W | 80 A | SILICON | R-PDSO-F8 | e3 | Not Qualified | AEC-Q101 | 1 | 175 °C | 260 | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | 8 | |||||
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IPG20N06S2L65AUMA1
Infineon Technologies AG
|
Check for Price | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 55 V | 2 | 20 A | 65 mΩ | 40 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SILICON | R-PDSO-F8 | AEC-Q101 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TDSON-8 | unknown | EAR99 |