Parametric results for: IPD50N06S2-14 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 3

5 hits Apply

240.0 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

55 V 5

5 hits Apply

Drain Current-Max (ID) (1)

50 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

14.4 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-252 5

5 hits Apply

R-PSSO-G2 5

5 hits Apply

e3 3

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 Rochester Electronics LLC 1

5 hits Apply

1 3

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 1

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 5

5 hits Apply

Yes 3

5 hits Apply

260 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

136 W 1

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply