Parametric results for: IPD12-C10X under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 4

6 hits Apply

154.0 mJ 6

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (2)

85 V 2 100 V 4

Min (V) - Max (V)

6 hits Apply

Drain Current-Max (ID) (1)

67 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

12.4 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-252AA 6

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e3 3

6 hits Apply

Manufacturer (1)

Infineon Technologies AG 6

6 hits Apply

1 2 3 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 5

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 1 End Of Life 3 Obsolete 2

6 hits Apply

No 1 Yes 2

6 hits Apply

260 2 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

125 W 2

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply