Parametric results for: IPB90 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

331.0 mJ 6 475.0 mJ 3 678.0 mJ 2

Min (mJ) - Max (mJ)

12 hits Apply

DRAIN 8

12 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

12 hits Apply

DS Breakdown Voltage-Min (3)

40 V 3 60 V 6 900 V 2

Min (V) - Max (V)

12 hits Apply

Drain Current-Max (ID) (2)

15 A 2 90 A 9

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (4)

2.1 mΩ 3 3.4 mΩ 3 3.7 mΩ 3 340 mΩ 2

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

12 hits Apply

TO-263AB 11

12 hits Apply

R-PSSO-G2 11

12 hits Apply

e3 8

12 hits Apply

Manufacturer (1)

Infineon Technologies AG 12

12 hits Apply

1 10

12 hits Apply

Number of Elements (1)

1 11

12 hits Apply

Number of Terminals (1)

2 11

12 hits Apply

ENHANCEMENT MODE 11

12 hits Apply

175.0 °C 3

12 hits Apply

PLASTIC/EPOXY 11

12 hits Apply

RECTANGULAR 11

12 hits Apply

SMALL OUTLINE 11

12 hits Apply

Active 5 Not Recommended 2 Obsolete 5

12 hits Apply

No 2 Yes 5

12 hits Apply

245 1 260 1 NOT SPECIFIED 8

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

12 hits Apply

150 W 3

12 hits Apply

Surface Mount (1)

YES 11

12 hits Apply