Parametric results for: IPB65R110CFD under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 3

6 hits Apply

97.0 mJ 1 845.0 mJ 5

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

650 V 6

6 hits Apply

Drain Current-Max (ID) (2)

22 A 1 31.2 A 5

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (1)

110 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-263AB 6

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e3 6

6 hits Apply

Manufacturer (1)

Infineon Technologies AG 6

6 hits Apply

1 6

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

-55.0 °C 4

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 5 Obsolete 1

6 hits Apply

No 4

6 hits Apply

NOT SPECIFIED 5

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

114 W 1

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply