Parametric results for: IPA83A under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

8.0 mJ 2 10.0 mJ 2 13.0 mJ 2 16.0 mJ 2 20.0 mJ 2 29.0 mJ 2 34.0 mJ 2 43.0 mJ 2 170.0 mJ 3 230.0 mJ 3 340.0 mJ 3 470.0 mJ 3 670.0 mJ 3

Min (mJ) - Max (mJ)

31 hits Apply

ISOLATED 31

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 31

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DS Breakdown Voltage-Min (1)

800 V 31

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Drain Current-Max (ID) (12)

3.9 A 3 4 A 2 4.5 A 1 5.7 A 3 6 A 1 7 A 1 8 A 3 10.8 A 3 11 A 1 13 A 1 16.7 A 3 17 A 1

Min (A) - Max (A)

31 hits Apply

Drain-source On Resistance-Max (12)

280 mΩ 2 310 mΩ 3 360 mΩ 2 450 mΩ 2 460 mΩ 3 600 mΩ 2 650 mΩ 3 750 mΩ 2 900 mΩ 2 950 mΩ 3 1.2 Ω 2 1.4 Ω 5

Min (Ω) - Max (Ω)

31 hits Apply

METAL-OXIDE SEMICONDUCTOR 31

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TO-220AB 31

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R-PSFM-T3 31

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e3 26

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Manufacturer (1)

Infineon Technologies AG 31

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Number of Elements (1)

1 31

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Number of Terminals (1)

3 31

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ENHANCEMENT MODE 31

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150.0 °C 9

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-55.0 °C 15

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PLASTIC/EPOXY 31

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RECTANGULAR 31

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FLANGE MOUNT 31

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Active 14 Not Recommended 10 Obsolete 7

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Yes 13

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NOT SPECIFIED 26

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Polarity/Channel Type (1)

N-CHANNEL 31

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24 W 2 25 W 1 26 W 1 27 W 1 28 W 1 29 W 1 30 W 2

Min (W) - Max (W)

31 hits Apply

Surface Mount (1)

NO 31

31 hits Apply