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IDT71V65603S150BQGI
Integrated Device Technology Inc
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Check for Price Buy | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 3.14 V | 345 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | TBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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IDT71V65603S150BQ8
Integrated Device Technology Inc
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Check for Price Buy | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | ZBT SRAM | PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 165 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | TBGA, | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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IDT71V65603S150BQI
Integrated Device Technology Inc
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Check for Price Buy | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | ZBT SRAM | PIPELINED ARCHITECTURE | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 3.14 V | 345 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 30 | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | TBGA, BGA165,11X15,40 | 165 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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IDT71V65603S150BQI8
Integrated Device Technology Inc
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Check for Price Buy | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | ZBT SRAM | PIPELINED ARCHITECTURE | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 165 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | TBGA, | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||
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IDT71V65603S150BQ
Integrated Device Technology Inc
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Check for Price Buy | No | No | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | ZBT SRAM | BURST COUNTER | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 325 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 225 | 30 | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | TBGA, BGA165,11X15,40 | 165 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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IDT71V65603S150BQG
Integrated Device Technology Inc
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Check for Price Buy | Yes | Yes | Transferred | 9.4372 Mbit | 36 | 256KX36 | 3.3 V | 3.8 ns | ZBT SRAM | BURST COUNTER | COMMON | 1 | 256000 | 262.144 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 325 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e1 | 3 | 70 °C | 260 | 30 | 165 | PLASTIC/EPOXY | TBGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.2 mm | 15 mm | 13 mm | INTEGRATED DEVICE TECHNOLOGY INC | BGA | TBGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 |