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IDT71V3557S80PFG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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IDT71V3557S80PFG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | |||
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IDT71V3557S80PFI9
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||||||||
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IDT71V3557S80PF9
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | 1 | 128000 | 131.072 k | SYNCHRONOUS | PARALLEL | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||||||||||
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IDT71V3557S80PFI8
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 45 mA | 3.14 V | 260 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 100 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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IDT71V3557S80PFI
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 45 mA | 3.14 V | 260 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 225 | 20 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 100 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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IDT71V3557S80PFGI
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | CACHE SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 45 mA | 3.14 V | 260 µA | 3.465 V | 3.135 V | CMOS | INDUSTRIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Matte Tin (Sn) - annealed | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | LQFP, QFP100,.63X.87 | 100 | compliant | 3A991.B.2.A | 8542.32.00.41 | 1998-08-01 | ||
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IDT71V3557S80PF
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 100 | not_compliant | 3A991.B.2.A | 8542.32.00.41 | |||||
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IDT71V3557S80PF8
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 4.7186 Mbit | 36 | 128KX36 | 3.3 V | 8 ns | 95 MHz | ZBT SRAM | FLOW-THROUGH ARCHITECTURE | COMMON | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | PARALLEL | 40 mA | 3.14 V | 250 µA | 3.465 V | 3.135 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 100 | PLASTIC/EPOXY | LQFP | QFP100,.63X.87 | RECTANGULAR | FLATPACK, LOW PROFILE | YES | Tin/Lead (Sn85Pb15) | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 100 | not_compliant | 3A991.B.2.A | 8542.32.00.41 |