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Manufacturer Part Number: idt7134la55jg
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IDT7134LA55JGB8
 Integrated Device Technology Inc 		Check for Price Yes Yes Obsolete 32.768 kbit 8 4KX8 5 V 55 ns MULTI-PORT SRAM COMMON 2 4000 4.096 k ASYNCHRONOUS 3-STATE PARALLEL 4 mA 2 V 220 µA CMOS COMMERCIAL S-PQCC-J52 Not Qualified e3 1 70 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD INTEGRATED DEVICE TECHNOLOGY INC unknown EAR99 8542.32.00.41
IDT7134LA55JGI
 Integrated Device Technology Inc 		Check for Price Yes Yes Transferred 32.768 kbit 8 4KX8 5 V 55 ns MULTI-PORT SRAM COMMON 1 2 4000 4.096 k ASYNCHRONOUS 3-STATE PARALLEL 4 mA 2 V 220 µA 5.5 V 4.5 V CMOS INDUSTRIAL S-PQCC-J52 Not Qualified e3 1 85 °C -40 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.57 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC compliant EAR99 8542.32.00.41 LCC QCCJ, LDCC52,.8SQ 52
IDT7134LA55JGB
 Integrated Device Technology Inc 		Check for Price Yes Yes Transferred 32.768 kbit 8 4KX8 5 V 55 ns MULTI-PORT SRAM COMMON 1 2 4000 4.096 k ASYNCHRONOUS 3-STATE PARALLEL 4 mA 2 V 220 µA 5.5 V 4.5 V CMOS MILITARY S-PQCC-J52 Not Qualified e3 1 125 °C -55 °C 260 MIL-PRF-38535 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.57 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC compliant 3A001.A.2.C 8542.32.00.41 LCC QCCJ, LDCC52,.8SQ 52
IDT7134LA55JGI8
 Integrated Device Technology Inc 		Check for Price Yes Yes Obsolete 32.768 kbit 8 4KX8 5 V 55 ns MULTI-PORT SRAM COMMON 2 4000 4.096 k ASYNCHRONOUS 3-STATE PARALLEL 4 mA 2 V 220 µA CMOS COMMERCIAL S-PQCC-J52 Not Qualified e3 1 70 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD INTEGRATED DEVICE TECHNOLOGY INC unknown EAR99 8542.32.00.41
IDT7134LA55JG8
 Integrated Device Technology Inc 		Check for Price Yes Yes Transferred 32.768 kbit 8 4KX8 5 V 55 ns MULTI-PORT SRAM AUTOMATIC POWER-DOWN; BATTERY BACKUP COMMON 1 2 4000 4.096 k ASYNCHRONOUS 3-STATE PARALLEL 1.5 mA 2 V 200 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQCC-J52 Not Qualified e3 1 70 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.57 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC compliant EAR99 8542.32.00.41 LCC QCCJ, LDCC52,.8SQ 52
IDT7134LA55JG
 Integrated Device Technology Inc 		Check for Price Yes Yes Transferred 32.768 kbit 8 4KX8 5 V 55 ns MULTI-PORT SRAM COMMON 1 2 4000 4.096 k ASYNCHRONOUS 3-STATE PARALLEL 1.5 mA 2 V 200 µA 5.5 V 4.5 V CMOS COMMERCIAL S-PQCC-J52 Not Qualified e3 1 70 °C 260 30 52 PLASTIC/EPOXY QCCJ LDCC52,.8SQ SQUARE CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 4.57 mm 19.1262 mm 19.1262 mm INTEGRATED DEVICE TECHNOLOGY INC compliant EAR99 8542.32.00.41 LCC QCCJ, LDCC52,.8SQ 52