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IDT71342LA20JG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 32.768 kbit | 8 | 4KX8 | 5 V | 20 ns | MULTI-PORT SRAM | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 70 °C | 52 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, | 52 | compliant | EAR99 | 8542.32.00.41 | 1995-01-01 | |||||||||
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IDT71342LA20J8
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 20 ns | MULTI-PORT SRAM | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 4.5 mA | 2 V | 240 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | PLASTIC, LCC-52 | 52 | not_compliant | EAR99 | 8542.32.00.41 | |||
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IDT71342LA20J
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 32.768 kbit | 8 | 4KX8 | 5 V | 20 ns | MULTI-PORT SRAM | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 4.5 mA | 2 V | 240 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e0 | 3 | 70 °C | 225 | 20 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | PLASTIC, LCC-52 | 52 | not_compliant | EAR99 | 8542.32.00.41 | |||
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IDT71342LA20JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 32.768 kbit | 8 | 4KX8 | 5 V | 20 ns | DUAL-PORT SRAM | SEMAPHORE; AUTOMATIC POWER-DOWN; BATTERY BACKUP | 1 | 2 | 4000 | 4.096 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 2 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, | 52 | compliant | EAR99 | 8542.32.00.41 | 1995-01-01 |