Filter Your Search
1 - 4 of 4 results
|
IDT7130SA35JG8
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 4.5 V | 165 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | EAR99 | 8542.32.00.41 | ||||
|
IDT7130SA35JGB
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | 230 µA | 5.5 V | 4.5 V | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e3 | 1 | 125 °C | -55 °C | 260 | MIL-PRF-38535 Class Q | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | 3A001.A.2.C | 8542.32.00.41 | ||
|
IDT7130SA35JGB8
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Obsolete | 8.192 kbit | 8 | 1KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 4.5 V | 230 µA | CMOS | MILITARY | S-PQCC-J52 | Not Qualified | e3 | 1 | 125 °C | -55 °C | 260 | 38535Q/M;38534H;883B | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | INTEGRATED DEVICE TECHNOLOGY INC | unknown | 3A001.A.2.C | 8542.32.00.41 | |||||||||||
|
IDT7130SA35JG
Integrated Device Technology Inc
|
Check for Price | Yes | Yes | Transferred | 8.192 kbit | 8 | 1KX8 | 5 V | 35 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 1000 | 1.024 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 15 mA | 4.5 V | 165 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.572 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | EAR99 | 8542.32.00.41 |