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IDT70121L55JG
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 18.432 kbit | 9 | 2KX9 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5 mA | 2 V | 200 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | EAR99 | 8542.32.00.41 | ||
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IDT70121L55JG8
Integrated Device Technology Inc
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Check for Price | Yes | Yes | Transferred | 18.432 kbit | 9 | 2KX9 | 5 V | 55 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 5 mA | 2 V | 200 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | S-PQCC-J52 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 52 | PLASTIC/EPOXY | QCCJ | LDCC52,.8SQ | SQUARE | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 4.57 mm | 19.1262 mm | 19.1262 mm | INTEGRATED DEVICE TECHNOLOGY INC | LCC | QCCJ, LDCC52,.8SQ | 52 | compliant | EAR99 | 8542.32.00.41 |