Parametric results for: HYB514256B under DRAMs

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Manufacturer Part Number: hyb514256b
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HYB514256BZ-70
Infineon Technologies AG
Check for Price No Obsolete 1.0486 Mbit 4 256KX4 5 V 70 ns 512 FAST PAGE DRAM COMMON 256000 262.144 k 3-STATE 1 mA 80 µA CMOS COMMERCIAL R-PZIP-T20 Not Qualified e0 70 °C 20 PLASTIC/EPOXY ZIP ZIP20,.1 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 1.27 mm ZIG-ZAG INFINEON TECHNOLOGIES AG not_compliant EAR99 8542.32.00.02
HYB514256B-60
Infineon Technologies AG
Check for Price No Obsolete 1.0486 Mbit 4 256KX4 5 V 60 ns 512 FAST PAGE DRAM COMMON 256000 262.144 k 3-STATE 1 mA 80 µA CMOS COMMERCIAL R-PDIP-T20 Not Qualified e0 70 °C 20 PLASTIC/EPOXY DIP DIP20,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL INFINEON TECHNOLOGIES AG not_compliant EAR99 8542.32.00.02
HYB514256BL-70
Siemens
Check for Price Obsolete 1.0486 Mbit 4 256KX4 5 V 70 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE 5.5 V 4.5 V CMOS COMMERCIAL R-PDIP-T20 Not Qualified 70 °C 20 PLASTIC/EPOXY DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL SIEMENS A G unknown EAR99 8542.32.00.02 ,
HYB514256BL-50
Infineon Technologies AG
Check for Price No Obsolete 1.0486 Mbit 4 256KX4 5 V 50 ns 512 FAST PAGE DRAM COMMON 256000 262.144 k 3-STATE 200 µA 90 µA CMOS COMMERCIAL R-PDIP-T20 Not Qualified e0 70 °C 20 PLASTIC/EPOXY DIP DIP20,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL INFINEON TECHNOLOGIES AG not_compliant EAR99 8542.32.00.02
HYB514256BJ-70
Infineon Technologies AG
Check for Price No Obsolete 1.0486 Mbit 4 256KX4 5 V 70 ns 512 FAST PAGE DRAM COMMON 256000 262.144 k 3-STATE 1 mA 70 µA CMOS COMMERCIAL R-PDSO-J20 Not Qualified e0 70 °C 20 PLASTIC/EPOXY SOJ SOJ20/26,.34 RECTANGULAR SMALL OUTLINE YES Tin/Lead (Sn/Pb) J BEND 1.27 mm DUAL INFINEON TECHNOLOGIES AG not_compliant EAR99 8542.32.00.02
HYB514256BJL-60
Siemens
Check for Price Obsolete 1.0486 Mbit 4 256KX4 5 V 60 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J20 Not Qualified 70 °C 20 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND DUAL SIEMENS A G unknown EAR99 8542.32.00.02 ,
HYB514256BZL-70
Siemens
Check for Price Obsolete 1.0486 Mbit 4 256KX4 5 V 70 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN/BATTERY BACKUP REFRESH 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE 5.5 V 4.5 V CMOS COMMERCIAL R-PZIP-T20 Not Qualified 70 °C 20 PLASTIC/EPOXY RECTANGULAR IN-LINE NO THROUGH-HOLE ZIG-ZAG SIEMENS A G unknown EAR99 8542.32.00.02 ,
HYB514256B-50
Infineon Technologies AG
Check for Price No Obsolete 1.0486 Mbit 4 256KX4 5 V 50 ns 512 FAST PAGE DRAM COMMON 256000 262.144 k 3-STATE 1 mA 90 µA CMOS COMMERCIAL R-PDIP-T20 Not Qualified e0 70 °C 20 PLASTIC/EPOXY DIP DIP20,.3 RECTANGULAR IN-LINE NO Tin/Lead (Sn/Pb) THROUGH-HOLE 2.54 mm DUAL INFINEON TECHNOLOGIES AG not_compliant EAR99 8542.32.00.02
HYB514256BJ-50
Siemens
Check for Price Obsolete 1.0486 Mbit 4 256KX4 5 V 50 ns 512 FAST PAGE FAST PAGE DRAM RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1 1 256000 262.144 k ASYNCHRONOUS 3-STATE 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-J20 Not Qualified 70 °C 20 PLASTIC/EPOXY SOJ RECTANGULAR SMALL OUTLINE YES J BEND DUAL SIEMENS A G unknown EAR99 8542.32.00.02 ,
HYB514256BJ-80
Infineon Technologies AG
Check for Price No Obsolete 1.0486 Mbit 4 256KX4 5 V 80 ns 512 FAST PAGE DRAM COMMON 256000 262.144 k 3-STATE 1 mA 70 µA CMOS COMMERCIAL R-PDSO-J20 Not Qualified e0 70 °C 20 PLASTIC/EPOXY SOJ SOJ20/26,.34 RECTANGULAR SMALL OUTLINE YES Tin/Lead (Sn/Pb) J BEND 1.27 mm DUAL INFINEON TECHNOLOGIES AG not_compliant EAR99 8542.32.00.02