Parametric results for: HYB514100AZ-70 under DRAMs

All Filters Access Time-Max I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Terminals Number of Words Number of Words Code Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Time-Max (1)

70 ns 1

1 hit Apply

SEPARATE 1

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R-PZIP-T20 1

1 hit Apply

e0 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

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Memory Density (1)

4.1943 Mbit 1

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FAST PAGE DRAM 1

1 hit Apply

Memory Width (1)

1 1

1 hit Apply

20 1

1 hit Apply

4.1943 M 1

1 hit Apply

4000000.0 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

4MX1 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

ZIP 1

1 hit Apply

ZIP20,.1 1

1 hit Apply

RECTANGULAR 1

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IN-LINE 1

1 hit Apply

Refresh Cycles (1)

1024 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply