Parametric results for: HYB5118165BSJ under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 5

6 hits Apply

Access Time-Max (3)

50 ns 2 60 ns 2 70 ns 2

Min (ns) - Max (ns)

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RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 4 RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH 1

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COMMON 3

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R-PDSO-J42 6

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e0 3

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27.43 mm 2

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Manufacturer (2)

Infineon Technologies AG 3 Siemens 3

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Memory Density (1)

16.7772 Mbit 6

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EDO DRAM 6

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Memory Width (1)

16 6

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1.0 5

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1 5

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42 6

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1.0486 M 6

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1000000.0 6

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ASYNCHRONOUS 5

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70.0 °C 6

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0.0 °C 6

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Organization (1)

1MX16 6

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3-STATE 4

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PLASTIC/EPOXY 6

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SOJ 6

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SOJ42,.44 3

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RECTANGULAR 6

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SMALL OUTLINE 6

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Refresh Cycles (1)

1024 4

6 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 6

6 hits Apply