Parametric results for: HYB5116100ASJ-50 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 2

2 hits Apply

Access Time-Max (1)

50 ns 2

2 hits Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; TEST MODE 2

2 hits Apply

SEPARATE 1

2 hits Apply

R-PDSO-J24 2

2 hits Apply

e0 1

2 hits Apply

18.54 mm 1

2 hits Apply

Manufacturer (2)

Infineon Technologies AG 1 Siemens 1

2 hits Apply

Memory Density (1)

16.7772 Mbit 2

2 hits Apply

FAST PAGE DRAM 2

2 hits Apply

Memory Width (1)

1 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

24 2

2 hits Apply

16.7772 M 2

2 hits Apply

1.6E7 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

16MX1 2

2 hits Apply

3-STATE 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SOJ 1

2 hits Apply

SOJ24/28,.44 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Refresh Cycles (1)

4096 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply