Parametric results for: HY57V653220CTC-7 under DRAMs

All Filters Access Mode Access Time-Max Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

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Access Time-Max (1)

5.5 ns 1

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Clock Frequency-Max (fCLK) (1)

143 MHz 1

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COMMON 1

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1,2,4,8 1

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R-PDSO-G86 1

1 hit Apply

e0 1

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22.22 mm 1

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Manufacturer (1)

SK Hynix Inc 1

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Memory Density (1)

67.1089 Mbit 1

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SYNCHRONOUS DRAM 1

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Memory Width (1)

32 1

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1.0 1

1 hit Apply

1 1

1 hit Apply

86 1

1 hit Apply

2.0972 M 1

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2000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

2MX32 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSOP2 1

1 hit Apply

TSSOP86,.46,20 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply