Parametric results for: HY57V161610ET-5 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

DUAL BANK PAGE BURST 4

4 hits Apply

Access Time-Max (2)

4.5 ns 2 5 ns 2

Min (ns) - Max (ns)

4 hits Apply

AUTO/SELF REFRESH 4

4 hits Apply

Clock Frequency-Max (fCLK) (2)

183 MHz 2 200 MHz 2

Min (MHz) - Max (MHz)

4 hits Apply

COMMON 4

4 hits Apply

1,2,4,8 4

4 hits Apply

R-PDSO-G50 4

4 hits Apply

20.968 mm 4

4 hits Apply

Manufacturer (1)

SK Hynix Inc 4

4 hits Apply

Memory Density (1)

16.7772 Mbit 4

4 hits Apply

SYNCHRONOUS DRAM 4

4 hits Apply

Memory Width (1)

16 4

4 hits Apply

1.0 4

4 hits Apply

1 4

4 hits Apply

50 4

4 hits Apply

1.0486 M 4

4 hits Apply

1000000.0 4

4 hits Apply

SYNCHRONOUS 4

4 hits Apply

70.0 °C 2 85.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

-40.0 °C 2 0.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

Organization (1)

1MX16 4

4 hits Apply

3-STATE 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

TSOP2 4

4 hits Apply

TSOP50,.46,32 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE, THIN PROFILE 4

4 hits Apply

Refresh Cycles (1)

4096 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 4

4 hits Apply