Parametric results for: HY5116810TC-10 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 1

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Access Time-Max (1)

100 ns 1

1 hit Apply

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH 1

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COMMON 1

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R-PDSO-G28 1

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e0 1

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18.41 mm 1

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Manufacturer (1)

SK Hynix Inc 1

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Memory Density (1)

16.7772 Mbit 1

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FAST PAGE DRAM 1

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Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

28 1

1 hit Apply

2.0972 M 1

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2000000.0 1

1 hit Apply

ASYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

1 hit Apply

Organization (1)

2MX8 1

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3-STATE 1

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PLASTIC/EPOXY 1

1 hit Apply

TSOP2 1

1 hit Apply

TSOP28,.46 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply