Parametric results for: HUFA75639S3S under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 7

13 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 7

13 hits Apply

DS Breakdown Voltage-Min (1)

100 V 7

13 hits Apply

Drain Current-Max (ID) (1)

56 A 10

13 hits Apply

Drain-source On Resistance-Max (1)

25 mΩ 7

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

13 hits Apply

TO-263AB 7

13 hits Apply

R-PSSO-G2 7

13 hits Apply

e3 7

13 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 5 Intersil Corporation 2 onsemi 5 Rochester Electronics LLC 1

13 hits Apply

1 7

13 hits Apply

Number of Elements (1)

1 10

13 hits Apply

Number of Terminals (1)

2 7

13 hits Apply

ENHANCEMENT MODE 7

13 hits Apply

175.0 °C 7

13 hits Apply

-55.0 °C 1

13 hits Apply

PLASTIC/EPOXY 7

13 hits Apply

RECTANGULAR 7

13 hits Apply

SMALL OUTLINE 7

13 hits Apply

Active 2 Obsolete 6 Transferred 5

13 hits Apply

Yes 5

13 hits Apply

245 3 260 3

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

13 hits Apply

200 W 7

13 hits Apply

Surface Mount (1)

YES 10

13 hits Apply