Parametric results for: HUF76639P3 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 1

5 hits Apply

DRAIN 4

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

5 hits Apply

Drain Current-Max (ID) (1)

51 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

27 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-220AB 4

5 hits Apply

R-PSFM-T3 4

5 hits Apply

e0 2 e3 3

5 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 Intersil Corporation 2 Rochester Electronics LLC 1

5 hits Apply

NOT APPLICABLE 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 3

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

Active 1 Obsolete 3 Transferred 1

5 hits Apply

Yes 1

5 hits Apply

NOT APPLICABLE 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

180 W 1 200 W 2

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply