Parametric results for: HUF76619D3 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 3

9 hits Apply

DRAIN 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

100 V 9

9 hits Apply

Drain Current-Max (ID) (1)

18 A 9

9 hits Apply

Drain-source On Resistance-Max (1)

89 mΩ 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

TO-251AA 2 TO-252AA 7

9 hits Apply

R-PSIP-T3 2 R-PSSO-G2 7

9 hits Apply

e0 3 e3 6

9 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 4 Intersil Corporation 3 Rochester Electronics LLC 2

9 hits Apply

1 4

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (2)

2 7 3 2

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

175.0 °C 6

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 9

9 hits Apply

IN-LINE 2 SMALL OUTLINE 7

9 hits Apply

Active 2 Obsolete 4 Transferred 3

9 hits Apply

Yes 2

9 hits Apply

260 2

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

75 W 6

9 hits Apply

Surface Mount (2)

NO 2 YES 7

9 hits Apply