Parametric results for: HUF76137S3 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 4 ULTRA-LOW RESISTANCE 4

11 hits Apply

DRAIN 9

11 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 9

11 hits Apply

DS Breakdown Voltage-Min (1)

30 V 9

11 hits Apply

Drain Current-Max (ID) (1)

75 A 11

11 hits Apply

Drain-source On Resistance-Max (2)

9 mΩ 1 12.5 mΩ 8

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-263AB 9

11 hits Apply

R-PSSO-G2 9

11 hits Apply

e0 6 e3 1

11 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 3 Harris Semiconductor 3 Intersil Corporation 3 Rochester Electronics LLC 2

11 hits Apply

1 1 NOT SPECIFIED 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

2 9

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 2 175.0 °C 4

Min (°C) - Max (°C)

11 hits Apply

PLASTIC/EPOXY 9

11 hits Apply

RECTANGULAR 9

11 hits Apply

SMALL OUTLINE 9

11 hits Apply

Active 2 Obsolete 7 Transferred 2

11 hits Apply

No 1 Yes 1

11 hits Apply

NOT SPECIFIED 2

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

145 W 2 175 W 4

Min (W) - Max (W)

11 hits Apply

Surface Mount (2)

NO 2 YES 9

11 hits Apply