Parametric results for: HN58V66AP-10E under EEPROMs

All Filters Access Time-Max Command User Interface Data Polling JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

100 ns 1

1 hit Apply

NO 1

1 hit Apply

YES 1

1 hit Apply

R-PDIP-T28 1

1 hit Apply

35.6 mm 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

Memory Density (1)

65.536 kbit 1

1 hit Apply

EEPROM 1

1 hit Apply

Memory Width (1)

8 1

1 hit Apply

1.0 1

1 hit Apply

28 1

1 hit Apply

8.192 k 1

1 hit Apply

8000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

8KX8 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

DIP 1

1 hit Apply

DIP28,.6 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

IN-LINE 1

1 hit Apply

64 words 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply