Parametric results for: HN58S256AT-15 under EEPROMs

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

150 ns 3

3 hits Apply

100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE 2

3 hits Apply

NO 3

3 hits Apply

YES 3

3 hits Apply

10 2

3 hits Apply

100000.0 Write/Erase Cycles 3

3 hits Apply

R-PDSO-G28 3

3 hits Apply

e0 1 e6 1

3 hits Apply

11.8 mm 3

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

Memory Density (1)

262.144 kbit 3

3 hits Apply

EEPROM 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1.0 3

3 hits Apply

28 3

3 hits Apply

32.768 k 3

3 hits Apply

32000.0 3

3 hits Apply

ASYNCHRONOUS 3

3 hits Apply

70.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (1)

32KX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TSOP1 3

3 hits Apply

TSSOP28,.53,22 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE, THIN PROFILE 3

3 hits Apply

64 words 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 3

3 hits Apply