Parametric results for: HN3C03F under RF Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

30 mA 5

5 hits Apply

1.35 pF 2 1.55 pF 3

Min (pF) - Max (pF)

5 hits Apply

Collector-Emitter Voltage-Max (1)

12 V 5

5 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS 5

5 hits Apply

DC Current Gain-Min (hFE) (1)

35.0 5

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 5

5 hits Apply

R-PDSO-G6 5

5 hits Apply

e0 2

5 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 5

5 hits Apply

Number of Elements (1)

2 5

5 hits Apply

Number of Terminals (1)

6 5

5 hits Apply

125.0 °C 5

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 5

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply

Transition Frequency-Nom (fT) (1)

4 GHz 5

5 hits Apply