Parametric results for: HGTD2N120BNS9A under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW CONDUCTION LOSS, AVALANCHE RATED 1

2 hits Apply

COLLECTOR 2

2 hits Apply

Collector Current-Max (IC) (1)

12 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

130 ns 1 200 ns 1

Min (ns) - Max (ns)

2 hits Apply

Gate-Emitter Thr Voltage-Max (1)

6.8 V 1

2 hits Apply

20 V 2

2 hits Apply

TO-252AA 2

2 hits Apply

R-PSSO-G2 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 Intersil Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

104 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply