Parametric results for: HB56UW464EJNB-6 under DRAMs

All Filters Access Mode Access Time-Max I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

EDO 2

2 hits Apply

Access Time-Max (1)

60 ns 2

2 hits Apply

COMMON 2

2 hits Apply

R-XDMA-N168 2

2 hits Apply

Manufacturer (1)

Hitachi Ltd 2

2 hits Apply

Memory Density (1)

268.4355 Mbit 2

2 hits Apply

EDO DRAM MODULE 2

2 hits Apply

Memory Width (1)

64 2

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

168 2

2 hits Apply

4.1943 M 2

2 hits Apply

4000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

70.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

4MX64 2

2 hits Apply

3-STATE 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

DIMM 2

2 hits Apply

DIMM168 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

MICROELECTRONIC ASSEMBLY 2

2 hits Apply

Refresh Cycles (1)

2048 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply