Parametric results for: HB56R864ES-6B under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Alternate Memory Width I/O Type JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE 1

1 hit Apply

Access Time-Max (1)

60 ns 1

1 hit Apply

RAS ONLY/CAS BEFORE RAS REFRESH 1

1 hit Apply

32 1

1 hit Apply

COMMON 1

1 hit Apply

R-XDMA-N168 1

1 hit Apply

Manufacturer (1)

Hitachi Ltd 1

1 hit Apply

Memory Density (1)

536.8709 Mbit 1

1 hit Apply

FAST PAGE DRAM MODULE 1

1 hit Apply

Memory Width (1)

64 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

168 1

1 hit Apply

8.3886 M 1

1 hit Apply

8000000.0 1

1 hit Apply

ASYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

8MX64 1

1 hit Apply

3-STATE 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

DIMM 1

1 hit Apply

DIMM168 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

MICROELECTRONIC ASSEMBLY 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply