Parametric results for: HB52R329E2-B6 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

DUAL BANK PAGE BURST 2

2 hits Apply

Access Time-Max (1)

7.5 ns 2

2 hits Apply

AUTO/SELF REFRESH; SEATED HGT-NOM 1

2 hits Apply

Clock Frequency-Max (fCLK) (1)

100 MHz 2

2 hits Apply

COMMON 2

2 hits Apply

R-XDMA-N168 2

2 hits Apply

133.37 mm 1

2 hits Apply

Manufacturer (1)

Hitachi Ltd 2

2 hits Apply

Memory Density (2)

134.2177 Mbit 1 2.4159 Gbit 1

Min (bit) - Max (bit)

2 hits Apply

SYNCHRONOUS DRAM MODULE 2

2 hits Apply

Memory Width (2)

4 1 72 1

Min - Max

2 hits Apply

1.0 2

2 hits Apply

1 2

2 hits Apply

168 2

2 hits Apply

33.5544 M 2

2 hits Apply

3.2E7 2

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

55.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (2)

32MX4 1 32MX72 1

2 hits Apply

3-STATE 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

DIMM 2

2 hits Apply

DIMM168 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

MICROELECTRONIC ASSEMBLY 2

2 hits Apply

Refresh Cycles (1)

4096 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply