Parametric results for: HB286008A3 under Flash Memories

All Filters Access Time-Max Additional Feature Endurance JESD-30 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

250 ns 2

2 hits Apply

100000 ENDURANCE WRITE CYCLE; USER SELECTABLE 5V VCC 2

2 hits Apply

100000.0 Write/Erase Cycles 2

2 hits Apply

X-XXMA-X68 2

2 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 1

2 hits Apply

Memory Density (1)

67.1089 Mbit 2

2 hits Apply

FLASH CARD 2

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Memory Width (1)

8 2

2 hits Apply

1.0 2

2 hits Apply

68 2

2 hits Apply

8.3886 M 2

2 hits Apply

8000000.0 2

2 hits Apply

ASYNCHRONOUS 2

2 hits Apply

60.0 °C 2

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

8MX8 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

MICROELECTRONIC ASSEMBLY 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 2

2 hits Apply