Parametric results for: HAT2285WP under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

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Configuration (1)

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

30 V 1

1 hit Apply

Drain Current-Max (ID) (1)

14 A 1

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Drain-source On Resistance-Max (1)

40 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PDSO-N6 1

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Manufacturer (1)

Renesas Electronics Corporation 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

6 1

1 hit Apply

ENHANCEMENT MODE 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 1

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Yes 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

15 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply