Parametric results for: HAF2012L under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 1

3 hits Apply

Drain Current-Max (ID) (1)

20 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

65 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PSIP-T3 3

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

No 1

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

50 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply