Parametric results for: HAF1009(L) under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

BUILT-IN THE OVER TEMPERATURE SHUT-DOWN CIRCUIT 2 LOGIC LEVEL COMPATIBLE 1

3 hits Apply

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

3 hits Apply

Drain Current-Max (Abs) (ID) (1)

40 A 1

3 hits Apply

Drain Current-Max (ID) (1)

40 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PSIP-T3 3

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

50 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply