Parametric results for: H5N2510DS under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

5 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

250 V 3

5 hits Apply

Drain Current-Max (ID) (1)

5 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

970 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PSSO-G2 3

5 hits Apply

e6 1

5 hits Apply

Manufacturer (2)

Hitachi Ltd 2 Renesas Electronics Corporation 3

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 3

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Active 1 Not Recommended 2 Obsolete 1 Transferred 1

5 hits Apply

Yes 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

25 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply