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H5N2510D(L)-(2)
Renesas Electronics Corporation
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Check for Price | Active | N-CHANNEL | NO | SINGLE | 1 | 5 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 150 °C | RENESAS ELECTRONICS CORP | , | compliant | EAR99 | |||||||||||||||||||||||||
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H5N2510D(L)-(2)
Hitachi Ltd
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 1 | 5 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 150 °C | HITACHI LTD | , | unknown | EAR99 | |||||||||||||||||||||||||
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H5N2510DL
Hitachi Ltd
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 970 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | HITACHI LTD | IN-LINE, R-PSIP-T3 | unknown | EAR99 | 3 | ||||||||||||
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H5N2510DL-E
Renesas Electronics Corporation
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Check for Price | Yes | Yes | Not Recommended | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 970 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 20 A | SWITCHING | SILICON | R-PSIP-T3 | e6 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN BISMUTH | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | IN-LINE, R-PSIP-T3 | compliant | EAR99 | 4 | DPAK(L)-(2) | PRSS0004ZD | Renesas Electronics | ||
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H5N2510DL
Renesas Electronics Corporation
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Check for Price | No | No | Not Recommended | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 5 A | 970 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 A | SWITCHING | SILICON | R-PSIP-T3 | e0 | Not Qualified | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | DPAK-3 | compliant | EAR99 | 3 |