Parametric results for: GWM160-0055P3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ISOLATED 1

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Configuration (1)

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

55 V 1

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Drain Current-Max (ID) (1)

160 A 1

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Drain-source On Resistance-Max (1)

2.9 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-PDFP-F17 1

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Manufacturer (1)

IXYS Corporation 1

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Number of Elements (1)

6 1

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Number of Terminals (1)

17 1

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ENHANCEMENT MODE 1

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175.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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FLATPACK 1

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Obsolete 1

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Yes 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

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