Parametric results for: GSM4535SF under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

40 V 1

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Drain Current-Max (ID) (1)

6.2 A 1

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Drain-source On Resistance-Max (1)

35 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-PDSO-G8 1

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Manufacturer (1)

Globaltech Semiconductor Co Ltd 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

8 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Contact Manufacturer 1

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Polarity/Channel Type (1)

P-CHANNEL 1

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2.8 W 1

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2.8 W 1

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Surface Mount (1)

YES 1

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