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GS8161Z18D-200IT
GSI Technology
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 6.5 ns | 200 MHz | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 2.3 V | 225 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 235 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 15 mm | 13 mm | GSI TECHNOLOGY | BGA | BGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||
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GS8161Z18D-200
GSI Technology
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 6.5 ns | 200 MHz | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.3 V | 215 µA | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 235 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 15 mm | 13 mm | GSI TECHNOLOGY | BGA | BGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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GS8161Z18D-200T
GSI Technology
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 6.5 ns | 200 MHz | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 2.3 V | 215 µA | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 70 °C | 235 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 15 mm | 13 mm | GSI TECHNOLOGY | BGA | BGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 | |||
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GS8161Z18D-200I
GSI Technology
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Check for Price | No | Obsolete | 18.8744 Mbit | 18 | 1MX18 | 2.5 V | 6.5 ns | 200 MHz | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY | COMMON | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | PARALLEL | 30 mA | 2.3 V | 225 µA | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B165 | Not Qualified | e0 | 3 | 85 °C | -40 °C | 235 | 165 | PLASTIC/EPOXY | BGA | BGA165,11X15,40 | RECTANGULAR | GRID ARRAY | YES | TIN LEAD | BALL | 1 mm | BOTTOM | 15 mm | 13 mm | GSI TECHNOLOGY | BGA | BGA, BGA165,11X15,40 | 165 | compliant | 3A991.B.2.A | 8542.32.00.41 |