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Parametric results for: GS665 under RF Power Field-Effect Transistors

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Manufacturer Part Number: gs665
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GS66516B-TR
 Gang Song Electronics Co Ltd 		Check for Price Contact Manufacturer P-CHANNEL YES SINGLE 6 650 V VERY HIGH FREQUENCY BAND 1 60 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-XBCC-N6 e4 3 260 30 SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GANG SONG ELECTRONICS CO LTD CHIP CARRIER, R-XBCC-N6 unknown EAR99
GS66502B-E01-MR
 GaN Systems 		Check for Price Yes Obsolete N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66502B-MR
 GaN Systems 		Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66502B-TR
 GaN Systems 		Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66504B-MR
 GaN Systems 		Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 15 A 130 mΩ 1.1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 30 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66508B-TR
 GaN Systems 		Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 4 650 V VERY HIGH FREQUENCY BAND 1 30 A 63 mΩ 1.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 60 A SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 3 150 °C -55 °C 260 30 SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) - with Nickel (Ni) barrier NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66516B-MR
 Gang Song Electronics Co Ltd 		Check for Price Contact Manufacturer P-CHANNEL YES SINGLE 6 650 V VERY HIGH FREQUENCY BAND 1 60 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-XBCC-N6 e4 3 260 30 SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GANG SONG ELECTRONICS CO LTD CHIP CARRIER, R-XBCC-N6 unknown EAR99
GS66508P-MR
 GaN Systems 		Check for Price Yes Contact Manufacturer P-CHANNEL YES SINGLE 4 650 V 1 63 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 72 A SWITCHING SILICON R-PBCC-N4 e4 3 -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER Gold (Au) - with Nickel (Ni) barrier NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66516T-E02-MR
 GaN Systems 		Check for Price Yes Obsolete N-CHANNEL YES SINGLE 4 650 V 1 60 A 32 mΩ 5.9 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 120 A SWITCHING GALLIUM NITRIDE R-PDSO-N4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GOLD OVER NICKEL NO LEAD DUAL GAN SYSTEMS INC SMALL OUTLINE, R-PDSO-N4 unknown EAR99 GaN Systems
GS66516T-TR
 GaN Systems 		Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 4 650 V 1 60 A 32 mΩ 5.9 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 120 A SWITCHING GALLIUM NITRIDE R-PDSO-N4 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GOLD OVER NICKEL NO LEAD DUAL GAN SYSTEMS INC ROHS COMPLIANT PACKAGE-4 unknown EAR99 GaN Systems
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