Parametric results for: GP30AHE3/54 under Rectifier Diodes
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GP30AHE3/54
Vishay Semiconductors
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Check for Price | Yes | Yes | Obsolete | 3 A | 1.2 V | 5 µs | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | HIGH VOLTAGE | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-201AD | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | ||
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RGP30AHE3/54
Vishay Semiconductors
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Check for Price | Yes | Yes | Obsolete | 3 A | 1.3 V | 150 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | EFFICIENCY | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 175 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | DO-201AD | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 | ||
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EGP30AHE3/54
Vishay Semiconductors
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Check for Price | Yes | Yes | Obsolete | 3 A | 950 mV | 50 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 50 V | 1 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | EFFICIENCY | 125 A | 1 | Not Qualified | O-PALF-W2 | e3 | 150 °C | -65 °C | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | MATTE TIN | WIRE | AXIAL | VISHAY SEMICONDUCTORS | O-PALF-W2 | 2 | unknown | EAR99 | 8541.10.00.80 |