Parametric results for: FX6-020P-0.8SV2 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Length Manufacturer Number of Elements Number of Functions Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Code Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

6 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS 1 SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

6 hits Apply

Drain Current-Max (ID) (1)

2 A 4

6 hits Apply

Drain-source On Resistance-Max (1)

250 mΩ 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

6 hits Apply

R-PDFP-F6 2 R-PDIP-T16 1 R-PDSO-F6 2 R-PDSO-G16 1

6 hits Apply

10.26 mm 1 19.685 mm 1

Min (mm) - Max (mm)

6 hits Apply

Manufacturer (2)

CML Microcircuits Plc 2 SANYO Electric Co Ltd 4

6 hits Apply

Number of Elements (1)

2 4

6 hits Apply

1.0 2

6 hits Apply

Number of Terminals (2)

16 2 6 4

6 hits Apply

ENHANCEMENT MODE 4

6 hits Apply

85.0 °C 2

6 hits Apply

-40.0 °C 2

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

DIP 1 SOP 1

6 hits Apply

RECTANGULAR 6

6 hits Apply

FLATPACK 2 IN-LINE 1 SMALL OUTLINE 3

6 hits Apply

Obsolete 6

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

6 hits Apply

1.5 W 1

6 hits Apply

Surface Mount (2)

NO 1 YES 5

6 hits Apply