Parametric results for: FW232 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

5 hits Apply

Drain Current-Max (ID) (1)

8 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

23 mΩ 1 26 mΩ 3

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G8 4

5 hits Apply

e6 1

5 hits Apply

Manufacturer (3)

onsemi 2 SANYO Electric Co Ltd 2 SANYO Semiconductor Co Ltd 1

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

2 4

5 hits Apply

Number of Terminals (1)

8 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 3

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

2 W 1 2.5 W 2

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply