Parametric results for: FT6111D under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

LOGIC LEVEL COMPATIBLE 2

2 hits Apply

ISOLATED 2

2 hits Apply

Configuration (1)

2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

120 V 2

2 hits Apply

Drain Current-Max (ID) (1)

3 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

750 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

60 pF 2

2 hits Apply

R-PSFM-T12 2

2 hits Apply

Manufacturer (2)

FUJITSU Limited 1 FUJITSU Semiconductor Limited 1

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

12 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

36 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply